| PART |
Description |
Maker |
| NMA5200-B1M |
High Power Broadband Noise Sources 100 Hz to 1000 MHz
|
Micronetics, Inc.
|
| NMA5107-B1M |
High Power Broadband Noise Sources 100 Hz to 100 MHz
|
http://
|
| NMA2512-2T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
| BFR181 Q62702-F1314 |
From old datasheet system
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
|
SIEMENS[Siemens Semiconductor Group]
|
| BFP182W |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| Q62702-F1492 BFR182W |
NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFR949L3 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3
|
Infineon Technologies AG
|
| BFP182R |
NPN Silicon RF Transistor
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| NMA5300-A1M |
High Power Broadband Noise Sources 2000 MHz to 18000 MHz
|
Micronetics, Inc.
|
| BFP183R Q62702-F1594 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BFP183W Q62702-F1503 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
